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Native Defects in n-type Sn-Doped GaAs Using Positron Annihilation Technique

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Periodical:

Materials Science Forum (Volumes 445-446)

Pages:

174-176

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.445-446.174

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Online since:

January 2004

Authors:

Asmita Saha, S. Gugre, D. Das, A. Sen Gupta

Keywords:

GaAs Sn-Doped, Positron Lifetime, S-Parameter, Vacancy Dopant Complex

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

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