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HomeMaterials Science ForumMaterials Science Forum Vols. 445-446Comparison of Vacancy Creation by Nuclear and...

Comparison of Vacancy Creation by Nuclear and Electronic Processes in Silicon Irradiated with Swift Kr and Bi Ions

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Periodical:

Materials Science Forum (Volumes 445-446)

Pages:

93-95

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.445-446.93

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Online since:

January 2004

Authors:

Paulo M. Gordo, L. Liszkay, K. Havancsák, V.A. Skuratov, Peter Sperr, W. Egger, C. Lopes Gil, Adriano P. de Lima, Z. Kajcsos

Keywords:

Defect, Irradiation, Positron Lifetime, Pulsed Positron Beam, Silicon, S-Parameter, Swift Ions, W-Parameter

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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