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Electrical Properties of the Mixed Bismuth Layer-Structured Bi7Ti4NbO21 Ceramics

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Abstract:

A mixed bismuth layer-structured compound, Bi7Ti4NbO21, has been prepared by the conventional solid state reaction. It showed an orthorhombic symmetry with a = 5.4428, b = 5.4043 and c = 29.041 Å by X-ray powder diffraction analysis. The hysteresis loops as a function of temperature were observed with a standardized ferroelectric test system. The remanent polarization and the coercive field of the material at 140°C were 14.06 µC/cm2 and 78.6 kV/cm, respectively. Thermal dependence of dielectric permittivity showed two-phase transitions at around 670°C and 845°C, which were also investigated by TSC and DSC. Finally, piezoelectric properties were obtained with a piezoelectric coefficient d33 = 10 pC/N. It was observed that Bi7Ti4NbO21 underwent a ferroelectric–paraelectric phase transition at 845°C by depolarization experiments.

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Periodical:

Key Engineering Materials (Volumes 280-283)

Pages:

255-258

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.280-283.255

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Online since:

February 2007

Authors:

Lina Zhang, Guo Rong Li, Su Chuan Zhao, Liao Ying Zheng, Qing Rui Yin

Keywords:

Bi7Ti4NbO21 Ceramics, Dielectric Property, Ferroelectric Property, Phase Transition

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] B. Aurivillius: Ark. Kem. Vol. 1 (1949), p.463.

Google Scholar

[2] T. Kukichi: J. Less-Common Met. Vol. 48 (1976), p.319.

Google Scholar

[3] S. Horiuchi, T. Kikuchi and M. Goto: Acta Cryst. Vol. A33 (1977), p.701.

Google Scholar

[4] T. Kukichi, A. Watanabe and K. Uchida: Mat. Res. Bull. Vol. 12 (1977), p.299.

Google Scholar

[5] F. Chu, D. Damjanovic, O. Steiner and N. Setter: J. Am. Ceram. Soc. Vol. 78 (1995), p.3142.

Google Scholar

[6] R. Maalal, R. Von Der Mühll, G. Trolliard and J. P. Mercurio: J. Phys. Chem. Solids Vol. 57 (1996), pp. (1957).

DOI: 10.1016/s0022-3697(96)00040-6

Google Scholar

[7] C. J. Kim and S. G. Hong: Thin Solid Films Vol. 365 (2000), p.58.

Google Scholar

[8] M. Villegas, A. C. Caballero, C. Moure, P. Durán and J. F. Fernández: J. Am. Ceram. Soc. Vol. 82 (1999), p.2411.

Google Scholar

[9] Z. Zhang, H. Yan, X. Dong and Y. Wang: Mater. Res. Bull. Vol. 38 (2003), p.241.

Google Scholar