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Nonlinear Electrical Properties of (Sc, Ta) Doped TiO2 Varistor Ceramics

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Abstract:

The nonlinear electrical properties of TiO2-based varistor doped with 0.25mol% Ta2O5 and different contents of Sc2O3 were investigated. It was found that the TiO2 varistor ceramic doped with 0.10mol% Sc2O3 exhibited an optimal nonlinear coefficient of 7.8, a breakdown electrical field of 16.0V/mm, and relative dielectric constant of 1.27 × 105 (measured at 1 kHz). In order to analyze the effect of Sc2O3 on TiO2 varistors, studies were made on the capacitance versus voltage characteristics. A Schottky-type barrier, which is assumed as the origin of varistor behavior, was inferred from the C-V measurement. The barrier height and donor concentration were obtained as 0.41eV and 1.21 × 1026cm-3, respectively, for sample doped with 0.10mol% Sc2O3. Analogized to the ZnO varistors, the formation mechanism of Schottky-type barrier was discussed in this paper by the theory of defect in crystal lattice.

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Periodical:

Key Engineering Materials (Volumes 280-283)

Pages:

289-292

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.280-283.289

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Online since:

February 2007

Authors:

Wen Bin Su, Jin Feng Wang, Hong Cun Chen, Guo Zhong Zang, Peng Qi, Chun Ming Wang

Keywords:

Electrical Properties, Scandia, Titania, Varistors

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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