Paper Titles
Effect of H2 Gas on Carbon Nanotubes Synthesis
p.3559
Quasicrystal Formation in the System Zr75-xTixCu25-yNiy
p.3563
Mechano-Synthesis and Characterization of Fe-Co Based Nanocrystalline Magnetic Materials
p.3567
Preparation and Microwave Permittivity of Nano-Sized Si/C/N Powder
p.3571
Synthesis of Bamboo-Shaped Gallium Nitride Nanorods
p.3575
Rapid Synthesis of Zinc Oxide and Lead Oxide Nanorods by One-Step Solid-State Reaction Methods at Ambient Conditions
p.3579
The Field Emission Properties of Sub-Micrometer Diamond Tube Arrays Fabricated by Focused Ion Beam Pattern
p.3583
Field Electron Emission from Carbon Nanotube Films on Diamond Films
p.3587
The Comparison Study of Field Emission Characteristics from (002)-Oriented AlN and W Tip
p.3591

Synthesis of Bamboo-Shaped Gallium Nitride Nanorods

Article Preview

Abstract:

Heagonal GaN nanorods have been synthesized through ammoniating ZnO/Ga2O3 films deposited by radio frequency(rf) magnetron sputtering on Si(111) substrates.X-ray diffraction(XRD), Fourier transform infrared spectrophotometer (FTIR), transimission electron microscopy(TEM), high-resolution transmission electron microscopy(HRTEM) and selected-area electron diffraction (SAED) are used to analyze the structure,composition and morphology of the synthesized GaN nanorods. TEM result shows that GaN nanorods own bamboo-shaped morphalogy and have a single-crystal hexagonal wurtzite structure.The average length and dimeter of the nanorods are 3μm and 50 nm espectively.Ga2O3 and NH3 reactived directly and synthesized GaN nanorods without any catalyzer and the process of space-confined reactions.

You might also be interested in these eBooks
PRICM-5 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

3575-3578

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.3575

Citation:

Cite this paper

Online since:

January 2005

Authors:

Zhi Zhong Dong, Haiyong Gao, Cheng Shan Xue, Zhi Hua Dong, Jian Ting He

Keywords:

Ammoniate, GaN Nanorods, RF Magnetron Sputtering, ZnO/Ga2O3 Films

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] S. Nakamura: Science Vol. 281 (1998), p.956.

Google Scholar

[2] F. Hamdani,M. yeadon and David J. Smith: J. Appl. Phys. Vol. 83 (1998), p.983.

Google Scholar

[3] C.N.R. Rao F.L. Deepak and Gautam Gundiah: Progress in Solid State Chemistry Vol. 31 (2003), p.5.

Google Scholar

[4] Han Weiqiang, Fan Shoushan and Li qunqing: Science Vol. 277 (1997), p.1287.

Google Scholar

[5] Li Y J, Qiao Z Y and Chen L X: Appl Phys A Vol. 71 (2000), p.587.

Google Scholar

[6] Chia-Chun Chen, Chun-Chia Yeh: J. Am. Chem. Soc. Vol. 123 (2001), p.2791.

Google Scholar

[7] Joshua Goldberger, Rongrui He and Yanfeng Zhang: Nature Vol. 422 (2003), p.599.

Google Scholar

[8] He M, Minus I and Zhou P Z: Appl Phys Lett. Vol. 77 (2000), p.3731.

Google Scholar

[9] R.D. Vispute,V. Talyansky and Z. Trajanovic: Appl. Phys. Lett. Vol. 70 (1997), p.2735.

Google Scholar

[10] K.S.A. Butcher, Afifuddin and Patrick P. -T. Chen: J. Crystal Growth Vol. 246 (2002), p.237.

Google Scholar

[11] Joshua Goldberger, Rongrui He and Yanfeng Zhang: Nature Vol. 422 (2003), p.599.

Google Scholar

[12] J.C. Wang S.Q. Feng, and D.P. Yu: Appl. Phys. A Vol. 75 (2002), p.691.

Google Scholar

[13] Ying-Ge Yang, Hong-Lei Ma and Cheng-Shan Xue: Applied Surface Science Vol. 193 (2002), p.254.

Google Scholar

[14] Masanobu Futsuhara, Katsuaki Yoshioka, Osamu Takai: Thin Solid Film Vol. 322 (1998), p.274.

Google Scholar

[15] J. H, Boo,A. Scott. Ustin , Wilson Ho: J. Crystal Growth Vol. 189-190 (1998), p.183.

Google Scholar

[16] H.A. Ali A.A. Iliadis and R.F. Mulligan: Solid-State Electronics Vol. 46 (2002), p.1639.

Google Scholar