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HEMT Carrier Mobility Analytical Model
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HEMT Carrier Mobility Analytical Model

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Abstract:

In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature.

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Periodical:

Materials Science Forum (Volume 494)

Pages:

43-48

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.494.43

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Online since:

September 2005

Authors:

P.M. Lukić, R.M. Ramović, Rajko M. Šašić

Keywords:

Carrier Mobility Model, High Electron Mobility Transistor HEMT

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] Kroemer H., Nobel Lecture: Qуasielectric Fields and Band Offsets: Teaching Electrons New Tricks, Reviews of Modern Physics, Vol. 73 (2001), p.783.

DOI: 10.1103/revmodphys.73.783

Google Scholar

[2] Z. I. Alferov, Nobel Lecture: The Double Heterostructure Concept and its Applications in Physics, Electronics and Technology, Reviews of Modern Physics, Vol. 73 (2001), p.767.

DOI: 10.1103/revmodphys.73.767

Google Scholar

[3] R. Ramović, P. Lukić, Mat. Sci. Forum, Vol. 453-454 (2004), p.27.

Google Scholar

[4] Petar M. Lukić, Bulletin Vinča Institute of Nuclear Sciences, (In Serbian), Vol. 8 (2003), p.70.

Google Scholar

[5] Rifat Ramović, Rajko Šašić: Analysis and Modeling of Small Dimensions Unipolar Transistors, (In Serbian), Dinex, Belgrade (1999).

Google Scholar

[6] R. Šašić: Analysis and Modeling of Physical Phenomena in GaAs Based Unipolar Transistors, (In Serbian), PhD degree Dissertation, Faculty of Electrical Eng., Belgrade, (1996).

Google Scholar

[7] Yannis P. Tsividis: Operation and Modeling of the MOS Transistors, MsGrow Hill, (1988).

Google Scholar

[8] R. Šašić: Quasy Two-Dimensional analytical and numerical models of electron transpotrt in MOS Structures, (In Serbian), MSc Degree These, Faculty of Electrical Eng., Belgrade, (1993).

Google Scholar

[9] R. Šašić, D. Čevizović, R. Ramović, Mat. Sci. Forum, Vol 413 (2003), p.39.

Google Scholar

[10] Y. Zhang & J. Singh, Journal of Applied Physics, Vol. 85 (1999), p.587.

Google Scholar

[11] Y. F. Wu, B. P. Keller, S. Keller, D. Kapolnek, P. Kozodoy, S. P. Denbaars, U. K. Mishra, Appl. Phys. Lett., Vol 69 (1996), p.1438.

DOI: 10.1063/1.117607

Google Scholar

[12] E. Calleja, M. A. Sanchez-Garcia, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, S. I. Molina, A. M. Sanchez, F. J. Pacheco, R. Garcia, Journal of Crystal Growth, Vol. 201/202 (1999), p.296.

Google Scholar

[13] M. A. Sanchez-Garcia, F. B. Naranjo, J. L Pau, A. Jimenez, E. Calleja, E. Munoz, S. I. Molina, A. M. Sanchez, F, J. Pacheco, and R. Garcia, Phys. Stat. Sol., Vol 176 (1999), p.447.

Google Scholar