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Labeled Weibull Plot of a C-Derived Si3N4-SiC Nanocomposite

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Abstract:

Four-point bending strength and Weibull distribution of the strength values of a carbon derived Si3N4-SiC nanocomposite have been investigated. The fracture origins were identified and characterized and a “labeled Weibull plot” was constructed. The fracture origins are surface, subsurface and volume located technological defects with a dimension from 10 µm to 180 µm, mainly in the form of cluster of pores and large SiC grains.

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Periodical:

Key Engineering Materials (Volume 290)

Pages:

292-295

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.290.292

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Online since:

July 2005

Authors:

Monika Kašiarová, Ján Dusza, Miroslav Hnatko, Pavol Šajgalík

Keywords:

Fractography, Si3N4/SiC Nanocomposites, Technological Defects, Weibull Analysis

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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