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Study on Chemical Mechanical Polishing Mechanism of LiTaO3 Wafer

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Abstract:

In this paper, the scratching processes by a diamond indentor under the loads linearly increased from zero were studied to assess the mechanical behavior of LiTaO3 crystal wafer. Material removal mechanism of LiTaO3 crystal by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of LiTaO3 wafers. The chemical mechanical polishing (CMP) processes of LiTaO3 wafers were analyzed in detail according to the observation and measurement of the polished surfaces of LiTaO3 wafers with SEM and XRD. The research results show that there exist four regimes along the scratched groove with the increasing of down force in a scratching process of LiTaO3 crystal wafer, and the critical load for each regime is affected by the loading speed and final load, etc. When H2O2 and KOH are added into the polishing slurry, the material of LiTaO3 wafer is removed by chemical reaction and mechanical action sequentially in the CMP processes, and the material removal rate increases while the surface roughness is improved.

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Advances in Grinding and Abrasive Technology XIII View Preview

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Periodical:

Key Engineering Materials (Volumes 304-305)

Pages:

310-314

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.304-305.310

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Online since:

February 2006

Authors:

Xin Wei, Hui Yuan, H.W. Du, Wei Xiong, Rui Wei Huang

Keywords:

Chemical Mechanical Polishing (CMP), Lithium Tantalite Crystal, Material Removal Mechanism, Scratching

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] http: /www. mt-berlin. com/frames_cryst/descriptions/lnb_lta. htm.

Google Scholar

[2] A.K. Sikder, F. Giglio, J. Wood, A. Kumar and M. Anthony: Journal of Electronic Materials, Vol. 30 (2001) No. 12, p.1520.

Google Scholar

[3] Z.R. Xia, Z.C. Li and K. Cui: Journal of Synthetic Crystals, Vol. 30 (2001) No. 4, p.419.

Google Scholar

[4] Y.W. Zhao, L. Chang and S.H. Kim: Wear, Vol. 254 (2003), p.332.

Google Scholar

[5] Y.L. Liu, K.L. Zhang, F. Wang and W.G. Di: Microelectronic Engineering, Vol. 66 (2003), p.438. H2O2 NaClO No Oxidant Ra (µm) R (mg/mm2) ×10-3 H2O2 NaClO No Oxidant.

Google Scholar