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Characterization of Electrical Properties of Si Nanocrystals Embedded in an Insulating Layer by Scanning Probe Microscopy

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Abstract:

Scanning probe microscope (SPM) with a conducting tip was used to electrically probe silicon nanocrystals (Si NCs) embedded in a SiO2 layer. The Si NCs were generated by the laser ablation method with compressed Si powder followed by a sharpening oxidation. The size of Si NCs is in the range of 10-50 nm, and the density is around 1011 /cm2. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift caused by the trapped charges were monitored. The results were compared with those of the conventional MOS capacitor.

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Periodical:

Materials Science Forum (Volumes 510-511)

Pages:

1094-1097

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.510-511.1094

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Online since:

March 2006

Authors:

Jung Min Kim, Hyun Jung Her, Jeong Min Son, Y. Khang, Eun Hye Lee, Yong Sang Kim, Y.J. Choi, C.J. Kang

Keywords:

Localized Electrical Properties, Scanning Probe Microscopy, Si Nanocrystal

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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