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Enhancement of the Characteristics of the ALD HfO2 Film by Using the High-Pressure D2 Annealing

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Abstract:

We investigated the characteristics of the HfO2 layer deposited by ALD method in MOSFET devices where the HfO2 film is incorporated as the gate dielectric layer. The HfO2 film was annealed with forming gas (FG) or high-pressure D2 gas to investigate the effect of annealing on the characteristics of the MOSFET device. It was found that the drain current and transconductance of the D2-annealed MOSFET device increased remarkably by ~10% compared with those of FG-annealed MOSFET device, which is a definite improvement that may contribute to reliable operation of the ultra high-density MOSFET devices.

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Periodical:

Materials Science Forum (Volumes 510-511)

Pages:

190-193

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.510-511.190

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Online since:

March 2006

Authors:

K.H. Baik, Seung Joon Ahn, Chul Geun Park, Seung Young Lee, Seung Joon Ahn

Keywords:

ALD HfO2, D2Gas, Gate Materials, High Pressure Annealing, Transconductance

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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