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Preparation and Characterization of Indium Tin Oxide for Optical Devices by Chemical Process

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Abstract:

Indium tin oxide (In-Sn-O, ITO) system is typical widely used as transparent electrodes for display devices, transparent coatings for solar energy heat mirrors and window films in p-n heterojunction solar cells because of their’s unique properties of a high visible transparency, good electrical conductivity, and excellent adhesion to the substrate, stable chemical property and easy patterning ability. In this paper, preparation and characterization of Indium tin oxide (ITO) thin films were studied by deposited dip coating process onto glass substrate. The mixing of various molar ratio of indium chloride (InCl3) and tin chloride (SnCl2.2H2O), (In:Sn mole ratio , 9:1, 7:3, 1:1), in acetylacetone were used as the starting solution. The suitable In:Sn ratio for one stoichiometry indium tin oxide (In2Sn2O7) compound were studied via hydrolysis process of mixed solution. The result of thermal gravimetric analysis were used to supported and corrected of calcining temperature. The precipitated powders were calcined at 500 0C and 600 0C. The result of XRD spectrum indicated that the calcined 9:1 powders at 6000C was show the highest stoichiometry of indium tin oxide (In2Sn2O7) compound with a polycrystalline cubic structure. The ITO thin films were studied by deposited dip coating process onto glass substrate with 20 layers at 600 0C for 1 hour. The optical properties, band gap energy and microstructure of ITO thin films were investigated by UV-vis spectrophotometer and Scaning Electron Microscope (SEM) respectively. The result of SEM was shown highly homogeneous surface and average grain size 20 nm with 95% transmittance which corresponding to XRD results. The calculated energy gap of ITO film was 3.40 eV.

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Periodical:

Advances in Science and Technology (Volume 45)

Pages:

2355-2361

DOI:

https://doi.org/10.4028/www.scientific.net/AST.45.2355

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Online since:

October 2006

Authors:

Patcharaporn Itthivisit, Samart Kongtaweelert, Sakda Traisak

Keywords:

Indium Tin Oxide (ITO), Precipitation, Sol-Gel (SG)

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] K.L. Chopra, S. Major and,D.K. Pandya 1983. Transparent conductors - a status review, Thin Solid Films . Vol. 102(1-46).

DOI: 10.1016/0040-6090(83)90256-0

Google Scholar

[2] A.K. Kulkarni, Kirk H. Schulz, T. S Lim, M. Khan 1999. Dependence of the sheet resistance of indium tin oxide thin films on grain size and grain orientation determined from X - ray diffraction techniques, Thin Solid Films . Vol. 345(273- 277) 9: 1 7: 3 1: 1 9: 1 7: 3 1: 1.

DOI: 10.1016/s0040-6090(98)01430-8

Google Scholar

[3] K. Osaza, T. Ye' Y. Aoyagi 1994. Deposition of thin in oxide films and it application to selective epitaxy of in situ processing, Thin Solid Films . Vol. 246(58- 64).

DOI: 10.1016/0040-6090(94)90732-3

Google Scholar

[4] S. Chul Lee, J. Ho Lee, T. Sung Oh, Y. Hwan Kim 2003. Fabrication of tin oxide by sol - gel method for photovoltaic solar cell system, Solar Energy Materials and Solar Cells . Vol. 75(481 - 487).

DOI: 10.1016/s0927-0248(02)00201-5

Google Scholar

[5] A. Mohammadi Gheidari, E Asl Soleimani, M Mansorhoseini, S. Mohajerzadeh, N. madani, W. Shams Kolahi 2005. Structure properties of indium tin oxide thin films prepared for application in solar cells, Materails Research Bulletin. Vol 40(1303-1307).

DOI: 10.1016/j.materresbull.2005.04.007

Google Scholar

[6] R. Rella, A. Serra, P. Siciliano, L. Vasanelli, G. De, A. LicciUlli, A. Quirini 1997. Tin oxide - based gas sensors prepare by sol - gel process, Sensors and Acturators B: Chemical. Vol 44(462-467).

DOI: 10.1016/s0925-4005(97)00205-0

Google Scholar

[7] Z. Jiao, Minghong Wu, J. Gu, X. Sun 2003. The gas sessing characteristics of ITO thin film prepared by sol - gel method, Sensors and Acturators B: Chemical. Vol. 94(216-221).

DOI: 10.1016/s0925-4005(03)00343-5

Google Scholar

[8] J.M. Liu, P.Y. Lu, W.K. Weng 2001. Studies on modifications of ITO surface in OLED devices by Taguchi methods , Materials science and engenering B. Vol. 85(209-211).

DOI: 10.1016/s0921-5107(01)00583-9

Google Scholar

[9] S. Bhagwat, R.P. Howson 1999. Use of the magnetron - sputtering technique for control of properties of indium tin oxide thin films , Surface and Coatings Technology. Vol. 111(163 - 171).

DOI: 10.1016/s0257-8972(98)00727-0

Google Scholar

[10] M. Nisha, S. Anusha, A. Antony, R. Manoj, M.K. Jayaraj 2005. Effect of substrate temperature on the growth of ITO thin films , Applied Surface Science. Vol. 252(1430 - 1435).

DOI: 10.1016/j.apsusc.2005.02.115

Google Scholar

[11] M. Rami, E. Benamar, C. Messaoudi, D. Sayah, A. Ennaoui 1998. Highly conducting and transparent spayed indium tin oxide , European Journal of Solid State and Inorganic Chemistry. Vol. 35(211 - 219).

DOI: 10.1016/s0992-4361(98)80002-7

Google Scholar

[12] T. Kawashima , H. Matsui , N. Tanabe 2003. New transparent conductive films: FTO coated ITO , Thin solid films. Vol. 445(241 - 244).

DOI: 10.1016/s0040-6090(03)01169-6

Google Scholar

[13] N.C. Pramanik, S. Das, P. K Biswas 2002. The effect of Sn(IV) on transformation of co - precipitated hydrated In(III) and Sn hydroxyl to indium tin oxide (ITO) powdwe , Material Letters. Vol. 56(671 - 679).

DOI: 10.1016/s0167-577x(02)00574-8

Google Scholar

[14] S. S Kim, S.Y. Choi, C.G. Park, H.W. Jin 1999. Transparent conductive ITO thin films though the sol - gel process using metal salts , Thin solid films. Vol. 347(155 - 160).

DOI: 10.1016/s0040-6090(98)01748-9

Google Scholar

[15] M.J. Alam, D.C. Cameron 2000. Optical and electrical properties of transparent conductive ITO thin films deposited by sol - gel process , Thin solid films. Vol. 00(245 - 259).

DOI: 10.1016/s0040-6090(00)01369-9

Google Scholar

[16] S.R. Ramanan 2001. Dip coated ITO thin films though sol - gel process using metal salts , Thin solid films. Vol. 389(207 - 212).

DOI: 10.1016/s0040-6090(01)00825-2

Google Scholar

[17] T.F. Stoica, V.S. Teodorescu, M.G. Blanchin, T.A. Stoica, M. Gartner, M. Losurdo, M. Zaharescu 2003. Morphology, structure and optical properties of sol - gel ITO thin films , Materials Science and Engineering B. Vol. 101(222 - 226).

DOI: 10.1016/s0921-5107(02)00667-0

Google Scholar

[18] C. Su, T. -K. Sheu, Y. -T. Chang, M. -A. Wan, M. -C. Feng, W. -C. Hung 2005. Preparation of ITO Thin Films by Sol - Gel Process and Their Characterization , Synthesis Metals. Vol. 153(9 - 12).

DOI: 10.1016/j.synthmet.2005.07.219

Google Scholar