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Persistent Photoconductivity in Hydrogenated Amorphous Silicon
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Is Persistent Photoconductivity in Nipi-Structures of Amorphous Silicon due to the Staebler-Wronski Effect?
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Numerical Modelling of Transient Transport Properties in Amorphous Semiconductors
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Recent Progress in the Interpretation of a-Si:H Transport Properties: Lifetimes, Mobilities and Mobility-Lifetime Products
p.525

Electronic DC Transport in a-Si:H
p.535

Properties of Hot Carriers in a-Si:H in Comparison to a-Se
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Short Range Order and Atomic Charge Distribution in Amorphous Silicon
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Steady-State Optical Modulation Spectroscopy of Undoped and Doped a-Si:H
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HomeSolid State PhenomenaSolid State Phenomena Vols. 44-46Recent Progress in the Interpretation of a-Si:H...

Recent Progress in the Interpretation of a-Si:H Transport Properties: Lifetimes, Mobilities and Mobility-Lifetime Products

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Hydrogenated Amorphous Silicon

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Periodical:

Solid State Phenomena (Volumes 44-46)

Pages:

525-534

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.44-46.525

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Online since:

July 1995

Authors:

N. Wyrsch, N. Beck, P. Pipoz, M. Goerlitzer, Haine Beck, A. Shah

Keywords:

Efficiency, Mobility, Mobility-Lifetime Product, Solar Cell, Transport Property

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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