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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52About a Novel Gettering Procedure for...

About a Novel Gettering Procedure for Multicrystalline Silicon Samples

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

485-490

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.485

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Online since:

May 1996

Authors:

C. Savigni, Maurizio Acciarri, Simona Binetti

Keywords:

Diffusion Length, Gettering, Metallic Impurity

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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