Paper Titles
Si Nanocrystals and Erbium Co-Doped Glasses for Optical Amplifiers
p.3
Nanomaterials for Lighting
p.13
Luminescent Nano-Sized ZnS and ZnO Particles
p.19
Microstructure and Spectroscopy of Lu2O3:Eu Prepared Using Various Synthesis Techniques
p.25
Grains of Porous Silicon Embedded in SiO2:Studies of Optical Gain and Electroluminescence
p.31
Luminescence Properties of a Multi-Component Glass Co-Implanted with Si and Er
p.37
Intersublevel Relaxation Dependence of Carrier Hopping in Self-Organized InAs Quantum Dot Heterostructures
p.41
Growth of InAs Quantum Dots on a Low Lattice-Mismatched AlGaSb Layer Prepared on GaAs (001) Substrates
p.49
Three-Dimensional Photonic Crystals
p.55

Grains of Porous Silicon Embedded in SiO2:Studies of Optical Gain and Electroluminescence

Article Preview

Abstract:

Recent reports on experimental observation of optical gain in silicon nanostructures in the visible region, performed at several laboratories all over the world, have triggered an extraordinary surge of interest in silicon lasing. However, attempts aimed at reproducing the red stimulated emission from „standard“silicon nanocrystals (sized 3-5 nm) at some other laboratories either failed, or. did not come to definite conclusions. Therefore, more detailed measurements of optical gain in a wider variety of samples containing Si nanocrystals are required in order to unravel whether or not the observation of optical gain is an intrinsic property of Si nanocrystals. We have performed a detailed study of optical gain in layers of densely packed Si nanocrystals in SiO2, prepared on the basis of porous Si, using the variable-stripe-length (VSL) method in combination with the shifted-excitation-spot (SES) method. In selected samples we have observed a distinct difference in behaviour between VSL and SES curves, indicating the occurrence of positive optical gain of ~ 24 cm-1. Preliminary reports on transport and electroluminescence measurements in thin films of SiO2 doped with porous silicon grains, prepared by spin-coating technique, are also discussed.

You might also be interested in these eBooks
Functional Nanomaterials for Optoelectronics and other Applications View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 99-100)

Pages:

31-36

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.99-100.31

Citation:

Cite this paper

Online since:

July 2004

Authors:

K. Dohnalová, K. Luterová, J. Valenta, Jiří Buršík, M. Procházka, V. Křesálek, B. Hönerlage, I. Pelant

Keywords:

Electroluminescence, Optical Gain, Porous Silicon (PS), Silicon Nanocrystals

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] for a recent review see: S. Ossicini, F. Priolo and L. Pavesi, Light Emitting Silicon for Microphotonics, Springer Tracts in Modern Physics, Vol. 194, 2003 Springer-Verlag Heidelberg, Germany.

DOI: 10.1007/b13588

Google Scholar

[2] L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo and F. Priolo: Nature Vol. 408 (2000), p.440.

DOI: 10.1038/35044012

Google Scholar

[3] L. Dal. Negro, M. Cazzanelli, Z. Gaburro, P. Bettoti, L. Pavesi, F. Priolo, G. Franzo, D. Pacifici and F. Iacona: in Towards the First Silicon Laser, editors: L. Pavesi, S. Gaponenko, L. Dal Negro, NATO Science Series, II. Mathematics, Physics and Chemistry - Vol. 93 (Kluwer Academic Publishers, 2003), p.145.

DOI: 10.1117/12.451992

Google Scholar

[4] M. Ivanda, U. V. Desnica, C. W. White and W. Kiefer: in Towards the First Silicon Laser, editors: L. Pavesi, S. Gaponenko, L. Dal Negro, NATO Science Series, II. Mathematics, Physics and Chemistry - Vol. 93 (Kluwer Academic Publishers, 2003), p.191.

DOI: 10.1007/978-94-010-0149-6_18

Google Scholar

[5] L. Khriachtchev, M. Rasanen, S. Novikov and J. Sinkkonen: Appl. Phys. Lett. Vol. 79 (2001), p.1249.

Google Scholar

[6] P. M. Fauchet and J. Ruan: in Towards the First Silicon Laser, editors: L. Pavesi, S. Gaponenko, L. Dal Negro, NATO Science Series, II. Mathematics, Physics and Chemistry - Vol. 93 (Kluwer Academic Publishers, 2003), p.197.

Google Scholar

[7] M. H. Nayfeh, N. Barry, J. Therrien, O. Akcakir, E. Gratton and G. Belomoin: Appl. Phys. Lett. Vol. 78 (2001), p.1131.

DOI: 10.1063/1.1347398

Google Scholar

[8] K. Luterová, I. Pelant, I. Mikulskas, R. Tomasiunas, D. Muller, J. -J. Grob, J. -L. Rehspringer and B. Honerlage: J. Appl. Phys. Vol. 91 (2002), p.2896.

DOI: 10.1063/1.1447308

Google Scholar

[9] J. Valenta, I. Pelant and J. Linnros: Appl. Phys. Lett. Vol. 81 (2002), p.1396.

Google Scholar

[10] J. Valenta, K. Luterová, R. Tomasiunas, K. Dohnalová, B. Honerlage and I. Pelant: in Towards the First Silicon Laser, editors: L. Pavesi, S. Gaponenko, L. Dal Negro, NATO Science Series, II. Mathematics, Physics and Chemistry - Vol. 93 (Kluwer Academic Publishers, 2003), p.223.

DOI: 10.1007/978-94-010-0149-6_21

Google Scholar

[11] V. Švrček, I. Pelant, J. -L. Rehspringer, P. Gilliot, D. Ohlmann, O. Crégut, B. Honerlage, T. Chvojka, J. Valenta and J. Dian: Mat. Sci. Eng. Vol. 19 (2002), p.233.

DOI: 10.1016/s0928-4931(01)00480-5

Google Scholar

[12] V. Švrček, A. Slaoui, J. -C. Muller, J. -L. RehspringerL, B. Honerlage, R. Tomasiunas and I. Pelant: Physica E Vol. 16 (2003), p.420.

Google Scholar

[13] V. Švrček, A. Slaoui, J. -L. Rehspringer and J. -C. Muller: J. Lumin. Vol. 101 (2003), p.269.

Google Scholar

[14] W. P. Dumke: Phys. Rev. Vol. 127 (1962), p.1559.

Google Scholar

[15] A. Irrera, D. Pacifici, M. Miritello, G. Franzo, F. Priolo, F. Iacona, D. Sanfilippo, G. Di Stefano and P. G. Fallica: Appl Phys. Lett. Vol. 81 (2002), p.1860.

DOI: 10.1063/1.1516235

Google Scholar