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Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO2 and SiON Using C2F6 and NF3-Based Gas Mixtures

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Abstract:

Inductively coupled plasma reactive ion etching of Ge doped silica glasses and SiON was investigated, using C2F6- and NF3-based gas mixtures. Mesas with smooth surfaces and vertical sidewalls were obtained, with a maximum etch rate of about 310nm/min in the case of C2F6 RIE of Ge-SiO2 and 280 nm/min in the case of SiON. The NF3 plasma yielded slightly higher etch rate, although sloped sidewalls were obtained. Results of the X-ray photoelectron spectroscopy showed little contamination on the etched surfaces.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

503-506

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.503

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Online since:

June 2007

Authors:

N.J. Kim, S.Y. Lee, G.K. Lee, J.H. Moon, Byung Teak Lee

Keywords:

C2F6, Ge-SiO2, ICP, NF3, RIE, SiON

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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