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Stress Impact on Reactive Diffusion in Nano-Structures of Spherical Symmetry

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Abstract:

To investigate the influence of stress on reactive diffusion, a remarkably clear experiment has been designed. Thin film Al/Cu/Al and Cu/Al/Cu triple layers are deposited on curved substrates of 25 nm radius and investigated by atom probe tomography. Due to the specific geometry, the excess volume of the reaction product induces compressive and dilatational stress on opposite sides of the product layer, even in the case of semi-coherent or incoherent interphase boundaries. The resulting stress gradient leads to additional driving force, which accelerates or decelerates the reaction rate in dependence on the stacking sequence of the layer material. By quantitative analysis, the induced level of stress can be quantified from the modified growth rate of the product.

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Periodical:

Solid State Phenomena (Volume 138)

Pages:

367-376

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.138.367

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Online since:

March 2008

Authors:

C.B. Ene, C. Nowak, Guido Schmitz

Keywords:

Al-Cu, Atom Probe Tomography (APT), Reaction-Induced Stress, Reactive Interdiffusion, Thin Film Reaction

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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