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Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al_.3Ga_.7As by Mössbauer Spectroscopy
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Hole Capture by the DX Center in AlGaAs Schottky Barriers
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Energy Shifts Due to the Local Environment of DX Centers in Al_x Ga_1-x As:Si
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Determination of the Decay Rate of Photoionized Te...

Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al_.3Ga_.7As by Mössbauer Spectroscopy

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

1105-1110

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.1105

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Online since:

October 1993

Authors:

H. Bemelmans, G. Borghs, G. Langouche

Keywords:

Al_xGa_1-xAs, DX Center, Persistent Photoionisation

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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