Development of High-Temperature Acoustic Emission Sensor Using Aluminium Nitrade Thin Film |
| Journal |
Advanced Materials Research (Volumes 13 - 14) |
| Volume |
Acoustic Emission Testing |
| Edited by |
R. Pullin, K.M. Holford, S.L. Evans and J.M. Dulieu-Barton |
| Pages |
111-116 |
| DOI |
10.4028/www.scientific.net/AMR.13-14.111 |
| Online since |
February, 2006 |
| Authors |
Hiroaki Noma,
E. Ushijima,
Y. Ooishi,
Morito Akiyama,
N. Miyoshi,
K. Kishi,
Tatsuo Tabaru,
I. Ohshima,
A. Kakami,
T. Kamohara
|
| Keywords |
AE Sensor, Aluminium Nitride (AlN), High Temperature |
| Abstract |
Aluminum nitride (AlN) is a promising Acoustic Emission (AE) sensor element for
high-temperature environments such as gas turbines and other plants because AlN maintains its
piezoelectricity up to 1200°C. Highly c-axis-oriented AlN thin-film sensor elements were prepared
on silicon single crystals by rf magnetron sputtering. Both ordinary-temperature AE sensors and
high-temperature AE sensors have been developed using these elements. In this paper, to study effects
of d33 and thickness of AlN elements on sensor sensitivity, AlN elements with d33 from 2 to 7 pm/V
and thickness from 3 to 9 /m were prepared. It is confirmed that the AE sensor sensitivity increased
with d33 and thickness of AlN elements. The sensitivity of the high-temperature AE sensor was also
improved by a design of the sensor structure. The sensor characteristics were evaluated at elevated
temperatures from 200 to 600˚C. It was confirmed that the AE sensor works well at 600˚C and does
not deteriorate. |
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