Paper Title:
Development of High-Temperature Acoustic Emission Sensor Using Aluminium Nitrade Thin Film
  Abstract

Aluminum nitride (AlN) is a promising Acoustic Emission (AE) sensor element for high-temperature environments such as gas turbines and other plants because AlN maintains its piezoelectricity up to 1200°C. Highly c-axis-oriented AlN thin-film sensor elements were prepared on silicon single crystals by rf magnetron sputtering. Both ordinary-temperature AE sensors and high-temperature AE sensors have been developed using these elements. In this paper, to study effects of d33 and thickness of AlN elements on sensor sensitivity, AlN elements with d33 from 2 to 7 pm/V and thickness from 3 to 9 /m were prepared. It is confirmed that the AE sensor sensitivity increased with d33 and thickness of AlN elements. The sensitivity of the high-temperature AE sensor was also improved by a design of the sensor structure. The sensor characteristics were evaluated at elevated temperatures from 200 to 600°C. It was confirmed that the AE sensor works well at 600°C and does not deteriorate.

  Info
Periodical
Advanced Materials Research (Volumes 13-14)
Edited by
R. Pullin, K.M. Holford, S.L. Evans and J.M. Dulieu-Barton
Pages
111-116
DOI
10.4028/www.scientific.net/AMR.13-14.111
Citation
H. Noma, E. Ushijima, Y. Ooishi, M. Akiyama, N. Miyoshi, K. Kishi, T. Tabaru, I. Ohshima, A. Kakami, T. Kamohara, "Development of High-Temperature Acoustic Emission Sensor Using Aluminium Nitrade Thin Film", Advanced Materials Research, Vols. 13-14, pp. 111-116, 2006
Online since
February 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ye Min Hu, Zheng Hu, Fan Zhang, Ying Li, Ming Yuan Zhu, Shi Wei Wang
Abstract:We report the preparation of quasi-arrays of aluminum nitride nanocones via chemical vapor deposition on nitriding treated titanium substrate...
476
Authors: Hiroshi Fukushima, Masanobu Azuma, Yukihiro Kanechika
Abstract:A high temperature HRTEM holder equipped with a W-coil heater was used to make insitu observation of high temperature behavior of Al2O3 very...
123
Authors: Jian Min Liu, Han Shui Wu
Thin Films
Abstract:Freestanding diamond film was prepared by hot filament chemical vapor deposition (HFCVD) method. Inter-Digital Transducer (IDT) was formed on...
2213
Authors: Qing Tao, Yan Wei Sui, Sun Zhi, Wei Song
Chapter 3: Optical and Electronic Materials
Abstract:AlN and TiN thin films are widely used in electronic devices and acoustic material and other fields because of its unique merit, the...
274
Authors: Tai Long Gui, Si Da Jiang, Chun Cheng Ban, Jia Qing Liu
Chapter 2:Advanced Material Science and Technology
Abstract:AlN dielectric thin films were deposited on N type Si(100) substrate by reactive radio frequency magnetron sputtering that directly...
409