Development of High-Temperature Acoustic Emission Sensor Using Aluminium Nitrade Thin Film

Abstract:

Aluminum nitride (AlN) is a promising Acoustic Emission (AE) sensor element for high-temperature environments such as gas turbines and other plants because AlN maintains its piezoelectricity up to 1200°C. Highly c-axis-oriented AlN thin-film sensor elements were prepared on silicon single crystals by rf magnetron sputtering. Both ordinary-temperature AE sensors and high-temperature AE sensors have been developed using these elements. In this paper, to study effects of d33 and thickness of AlN elements on sensor sensitivity, AlN elements with d33 from 2 to 7 pm/V and thickness from 3 to 9 /m were prepared. It is confirmed that the AE sensor sensitivity increased with d33 and thickness of AlN elements. The sensitivity of the high-temperature AE sensor was also improved by a design of the sensor structure. The sensor characteristics were evaluated at elevated temperatures from 200 to 600°C. It was confirmed that the AE sensor works well at 600°C and does not deteriorate.

• Periodical: Advanced Materials Research (Volumes 13-14)
• Pages: 111-116
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.13-14.111
• Online since: February 2006
• Authors: Hiroaki Noma, E. Ushijima, Y. Ooishi, Morito Akiyama, N. Miyoshi, K. Kishi, Tatsuo Tabaru, I. Ohshima, A. Kakami, T. Kamohara
• Keywords: AE Sensor, Aluminum Nitride (AlN), High-Temperature

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