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Electroceramics in Japan II

Key Engineering Materials Volumes 169 - 170

• Papers
• Abstracts

• p67 Tendencies of p-Type Thermoelectric Oxide Semiconductor   [ 215 K ]
  Authors: S. Nishiyama, T. Ushijima, K. Asakura, Takeshi Hattori
• p71 Thermoelectric Properties of Layer-Structured (ZnO)_mIn₂O₃(m=Integer) and Effects of Elemental Substitution   [ 194 K ]
  Authors: Mitsuhiko Ohta, Won Seon Seo, W. Pitschke, Kunihito Koumoto
• p75 Nonuniformity of the Electrical Properties in SiC Micro Thermistors   [ 204 K ]
  Authors: T. Terashige, K. Okano
• p79 Sensing Properties of Oxygen Sensor Using Hot Spot on La_0.2Sr_0.8Co_0.8Fe_0.2O_3-δ Ceramic Rod   [ 212 K ]
  Authors: Yuji Noguchi, H. Kuroiwa, Masasuke Takata
• p83 Effect of Glass Viscosity and Particle Size on Electric Resistivity of RuO₂-Glass Thick Film   [ 209 K ]
  Authors: A. Honda, Syunsuke Watanabe, H. Takagi, Yukio Sakabe
• p87 Composition an Heating Rate Dependences of Resistivity Versus Temperature Behavior in Conductive Composite Thin Films   [ 233 K ]
  Authors: Shingo Hirano, Akira Kishimoto
• p93 Function an Effect of Additives of Bi-Doped ZnO Ceramics   [ 208 K ]
  Authors: S. Tanaka, Naoki Ohashi, Kazuhiko Takahashi
• p97 Photoacoustic and Electrical Properties of Ceramic ZnO Doped with Bi₂O₃ Impurities   [ 231 K ]
  Authors: S. Shimamoto, T. Toyoda
• p101 Manufacturing Examples of Low Temperature Sintered ZnO-Varistors and their Electric Characteristics   [ 156 K ]
  Authors: Atsushi Iga, M. Ito, Kei Miyamoto, Hiroki Miyamoto
• p105 Evaluation of Single Grain Boundaries in ZnO:Rare-Earth Varistor by Photo-ICTS   [ 196 K ]
  Authors: A. Tanaka, K. Mukae
• p109 Surface Structures of (0001)/(000-1) of ZnO Single Crystals   [ 220 K ]
  Authors: Hideyuki Maki, Noboru Ichinose, S. Sekiguchi, Naoki Ohashi, Hajime Haneda, Junzo Tanaka
• p113 Grain Boundaries in BaTiO₃ with a Small Cation Nonstoichiometry   [ 304 K ]
  Authors: T. Yamamoto, Yuichi Ikuhara, Katsuya Hayashi, Taketo Sakuma
• p119 Properties of Soft BaTiO₃ Ceramics for Ferroelectric Thin Film Devices   [ 190 K ]
  Authors: Kunihiro Nagata, Jirawat Thongrueng, Toshio Tsuchiya, Yasuichi Masuda, S. Fujita
• p123 Reduction of Leakage Current in PbTiO₃ Film Fabricated by MOCVD   [ 287 K ]
  Authors: T.J. Wu, H. Uchida, O. Sakurai, Naoki Wakiya, Hiroshi Funakubo, Kazuo Shinozaki, Nobuyasu Mizutani
• p127 Orientation and Dielectric Properties of Sol-Gel Derived PbTiO₃ Thin Film   [ 205 K ]
  Authors: Toshiyuki Hirano, Yoshiyuki Kondo, Hisao Suzuki, Syouko Ito, Saichirou Kaneko, T. Wada