Paper Title:

Gunn Effect and THz Frequency Power Generation in n+- n - n+ GaN Structures

Periodical Materials Science Forum (Volumes 297 - 298)
Main Theme Ultrafast Phenomena in Semiconductors
Edited by Steponas Asmontas and Adolfas Dargys
Pages 341-344
DOI 10.4028/
Citation Viktor Gružinskis et al., 1998, Materials Science Forum, 297-298, 341
Authors Viktor Gružinskis, Jian H. Zhao, P. Shiktorov, E. Starikov
Keywords Electron Transport, Gallium Nitride (GaN), Microwave Generation, Modeling, Monte Carlo Particle, n+- n - n+ Diodes, Terahertz Frequency
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