Defects in Semiconductors 15
Materials Science Forum Volumes 38 - 41
doi:10.4028/www.scientific.net/MSF.38-41
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p1487
Microinhomogeneities Characterized by Photocurrent Measurements and the Sem-Ebic Technique in Alpha-Si:H Layers
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265 K
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Authors: M. Füstöss-Wegner, L. Pogány, Margit Koós, László S. Tóth, G. Zentai
