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Papers by Author: A.S. Usikov

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15 eV Protons Irradiation of the GaN Schottky Diodes

Authors: Alexander A. Lebedev, S.V. Belov, Marina G. Mynbaeva, Anatoly M. Strel'chuk, Elena V. Bogdanova, Yuri Makarov, A.S. Usikov, Sergey Kurin, I.S. Barash, Alexander D. Roenkov, Vitalii V. Kozlovski

Abstract: Schottky-barrier diodes with a diameter of ~10 μm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier rate was found to be 130-145 cm^-1. The linear nature of the dependence N = F (D) (N is carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transition of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.

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Electron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and Annealing

Authors: D.V. Davydov, Valentin V. Emtsev, Alexander A. Lebedev, W.V. Lundin, D.S. Poloskin, N.M. Shmidt, A.S. Usikov, E.E. Zavarin

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Electrical and Optical Properties of Highly Strained GaN Epilayers

Authors: A.S. Usikov, W.V. Lundin, B.V. Pushnyi, N.M. Shmidt, V.Yu. Davydov, A.V. Sakharov, T.V. Shubina, Andrey A. Toropov, N.N. Faleev, M.P. Shcheglov, A.F. Tsatsul'nikov

1393

Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

Authors: W.V. Lundin, A.S. Usikov, B.V. Pushnyi, U.I. Ushakov, M.V. Stepanov, N.M. Shmidt, T.V. Shubina, A.V. Sakharov, N.N. Faleev, V. Solov'ev, Alla A. Sitnikova, Yu.A. Kudriavtsev, B.Ya. Ber, Yu.M. Zadiranov

1315

Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

Authors: J. Holst, M. Straßburg, N.N. Ledentsov, L. Eckey, A. Göldner, Andreas Hoffmann, T. Hempel, D. Rudloff, F. Bertram, J. Christen, A.V. Sakharov, M.V. Maximov, A.S. Usikov, W.V. Lundin, B.V. Pushnyi, Z.I. Alferov

1291

Some Features of a Nucleation Layer Growth Process and its Influence on the GaN Epilayer Quality

Authors: W.V. Lundin, A.S. Usikov, B.V. Pushnyi, U.I. Ushakov, M.V. Stepanov, N.M. Shmidt, A.V. Sakharov, Yu.M. Zadiranov, S.M. Suturin, V. Busov

1125

Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

Authors: Valentin V. Emtsev, V.Yu. Davydov, I.N. Goncharuk, Evgenia V. Kalinina, Vitalii V. Kozlovski, D.S. Poloskin, A.V. Sakharov, N.M. Shmidt, A.N. Smirnov, A.S. Usikov

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