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Articles by author: Adolf Schöner

• In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p175)
• 3C-SiC MOS Based Devices: From Material Growth to Device Characterization
  Published in: Silicon Carbide and Related Materials 2010 (p433)
• 3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide
  Published in: Silicon Carbide and Related Materials 2010 (p645)
• 4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
  Published in: Silicon Carbide and Related Materials - 2002 (p769)
• A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer
  Published in: Silicon Carbide and Related Materials 2004 (p905)
• A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
  Published in: Silicon Carbide and Related Materials 2007 (p453)
• Boron Compensation of 6H Silicon Carbide
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p119)
• Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p917)
• Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
  Published in: Silicon Carbide and Related Materials 2007 (p89)
• Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition
  Published in: Silicon Carbide and Related Materials 2010 (p441)
• Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique
  Published in: Silicon Carbide and Related Materials 2004 (p701)
• Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p829)
• Current Gain Dependence on Emitter Width in 4H-SiC BJTs
  Published in: Silicon Carbide and Related Materials 2005 (p1425)
• Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons
  Published in: Silicon Carbide and Related Materials 2009 (p439)
• Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p451)