Papers by Author: B.I. Fomin

Abstract: In the present study, the pursued purposes were: (i) monitoring the electrical properties of silicon-on-insulator nanowires (SOI NWs), (ii) determination of surface treatments suitable for obtaining reproducible states on the surface of SOI NWs after their long-term storage, and (iii) identification of surface treatments suitable for regenerating the NW surface after protein (bovine serum albumin molecules) detection. It is shown that, during storage, with the passage of time a negative effective charge was accumulated on the surface of n-SOI NWs up to surface density Q_eff = (2-4)х10¹² cm^-2, while the interface states at the NW/SiO₂ interface underwent relatively slow depassivation. Treatments in H₂O₂ with subsequent treatments in HF can be used for removing organic contaminations from the NW surface and for regenerating the initial working state of SOI NWs after protein detection.

Abstract: Electro-physical properties of metal-oxide-silicon (MOS) structures and MOS transistors, prepared in the top silicon layer of silicon-on-insulator (SOI) structures containing Ge nanocrystals in the buried SiO2 layers, have been studied. It was obtained that carrier accumulation in MOS structures depend on the direction of built-in electrical field in MOS structures. Accumulation of the excess negative charges in the case of p-channel transistors is associated with electron trapping on Ge nanocrystals synthesized in the buried dielectric. In the case of n-channel transistor, positive charge related to the Si/SiO2 interface or to the charged oxide is accumulated. The Ge atoms diffused to the SiO2/Si interface can stimulate the formation of the excess positive charge.