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Articles by author: B. Pajot

• A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
  Published in: Defects in Semiconductors 17 (p969)
• Hydrogen-Dopant Interactions in III-V Semiconductors
  Published in: Defects in Semiconductors 16 (p539)
• Infrared Study of the Passivation of Zinc Acceptors by Hydrogen in Indium Phosphide
  Published in: Defects in Semiconductors 15 (p997)
• Interaction between X-H Bonds and the Lattice in III-V Compounds Determined from Temperature-Dependent Spectroscopic Studies
  Published in: Defects in Semiconductors 17 (p927)
• Interaction of Hydrogen with Impurities and Defects in Semiconductors
  Published in: Defect Interaction and Clustering in Semiconductors (p203)
• Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium
  Published in: Defects in Semiconductors 19 (p47)
• Local Mode Spectroscopy of OH and NH Complexes in Semi-Insulating Gallium Arsenide
  Published in: Defects in Semiconductors 16 (p581)
• Low-Frequency Vibrational Spectroscopy in SiC Polytypes
  Published in: Silicon Carbide and Related Materials 2000 (p349)
• Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium
  Published in: Defects in Semiconductors 19 (p41)
• Shallow Levels Passivation in Implanted and Plasma Hydrogenated Compound Semiconductors
  Published in: Hydrogen in Compound Semiconductors (p321)
• Vacancy- and Acceptor- H Complxes in Inp
  Published in: Defects in Semiconductors 18 (p969)