Papers by Author: B. Radjenović

Abstract: A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. The ion and electron fluxes were computed along the feature using the Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving the Laplace equation using finite elements method. Calculations were performed in the case of a simplified model of Ar+/CF4 nonequilibrium plasma etching of SiO2.

Abstract: Neutral beam processing has evolved into one of the most promising methods for overcoming plasma process induced damage. Surface treatment by neutrals avoids problems with surface charging effects, frequently encountered when using common ion treatment, especially for low k-materials. In this paper, the influence of various parameters on the neutralization of ion beams in Ar-CF4 mixture based on a Particle in Cell with Monte Carlo collisions (PIC/MCC) simulation is studied. The efficiency of neutralization has been treated by considering both surface neutralization of ions and collisions of ions in the gas.