Papers by Author: Bing Kun Xiang

Abstract: Micro-nanocrystalline diamond (M-NCD) Film may be successfully prepared on Mo substrate with DC arc plasmas jet deposition device. This paper studies the influences of carbon source concentration on the shape of M-NCD Film particles under circumstances of stable electric arc, and characterizes the grain size and quality of samples through SEM, AFM and Raman spectrum. The research result shows that, in the state of stable electric arc, relatively low carbon source concentration (1%) could deposit high-quality microcrystalline diamond film on the substrate, with a growth rate of up to 8.3μm/h and grain size of about 2～4μm; relatively high carbon source concentration (10% or 15%) could deposit high-quality nanocrystalline diamond(NCD) film on the microcrystalline diamond film at high speed, with a growth rate of up to above 12.6μm/h or 19.7μm/h, grain size of about 4～80nm and average grain size of 27.4nm.

Abstract: Boron-doped micro-nanocrystalline diamond coating may be successfully prepared on Mo substrate with DC arc plasmas jet deposition device. Along with the increase of doped-boron concentration in the film, two-point resistance measurement indicates that film resistance presents exponential decrease; Raman spectrum test shows that, the characteristic peak value of diamond 1332cm-1 in the spectrum moves toward low frequency, the semi-height width of diamond peak, peak D and peak G, etc. in the spectrum is expanded, and the component of non-diamond bonds such as sp2, etc. in the film is increased; SEM and AFM observation shows that, increasing the doped-boron concentration could further subdivide the crystal grains in the film, and is beneficial for the growth of nano- or ultra-nano-crystalline diamond film; film annealing test shows that, micro-nanocrystalline diamond film with higher doped-boron concentration has better thermal stability than the micro-nanocrystalline diamond film without doped boron.

Abstract: Diamond film was deposited on spherical molybdenum substrate by DC arc plasma CVD method. Diamond film morphology, purities and orientation evolution, obtained from atomic force microscopy, scanning electron microscopy, Raman spectroscopy, X ray diffraction respectively, has showed that grains on the growth surface are compact, continuous and uniform. Characteristic diamond (111), (220), (311) peaks were found and (111) facets were predominant. It revealed that diamond film was polycrystalline texture characteristic. There is a typical diamond Raman spectrum peaks at 1332.0 cm-1, and not graphite and amorphous carbon characteristic peak. High purity diamond film was deposited. When methane concentration was increased, diamond film has more local clusters and vacancy defects such as voids, graphite inclusion, and hydrogen cluster. Therefore, some important parameters such as methane concentration and substrate temperature should be optimized in depositing diamond film.

Abstract: In this paper, a new polishing technique was proposed to polish concave spherical surface by diamond spherical shell deposited by DC-Plasma Jet CVD(chemical vapor deposition), and preparation was studied from both experiment and theory. The deposited films were investigated by some techniques including: scanning electron microscopy (SEM), atom force microscopy (AFM), Raman spectroscopy, and roughness-profile-meter, which were used to analyze surface phase, microstructure, internal quality and surface roughness. The results show that the deposited diamond spherical shell film has some remarkable properties, such as high surface density, high hardness. Compared to traditional polishing techniques, it will have some potential advantages as convenient, flexible, efficient and precious. To adjust some important parameters as methane concentration, depositing time, and it can deposit the different size grain diamond spherical shell films, which are used to polish different precision degree concave spherical surfaces. Meantime, to change curvature of diamond spherical shell, it can adapt to polish various curvature radius concave spherical surfaces.

Abstract: Diamond spherical shell thick film was prepared by high power DC-plasma jet CVD. Atom force microscopy, scanning electron microscopy, Raman spectroscopy and roughness-profile-meter were used to characterize microstructure, morphology, impurities and orientation evolution of diamond spherical shell thick film. The results show that, when nucleation begins, grains grow random orientation. The grain size of spherical diamond film prepared is compact, clear, uniform, continuous and no remarkable bigger grain over the whole surface of film. On the growth surface, (100) facets were dominant, and the cross-section SEM indicated that film columnar spreading grew from the substrate surface to the diamond film surface. The roughness of the growth surface was much more than that of the nucleation surface. To adjust some important parameters as methane concentrate, depositing time, and matrix temperature, and high quality diamond spherical shell thick film was deposited.

Abstract: We investigated the residual stress in diamond films grown on molybdenum substrates as a function of different places in the same large sample. The diamond film wafers of Ф60 mm diameter were deposited at 900°C by high power DC arc plasma jet CVD method using a gas mixture of methane (1.8% vol.) and hydrogen ( 90% vol.). The grain sizes, obtained from the top view scanning electron microscopy (SEM) images, were found to become larger from center to the border in the same sample, and the x-ray diffraction indicated that the intensity of characteristic spectroscopy in same diamond film was changed from (220) to (111) with the increases of (311). Profile curves presented the appreciable difference of surface texture from center to edge. The film had 4.3GPa of residual compressive stress. Examination of the Raman spectra of the film revealed that residual stress in the film of up to approximately 0.70GPa, and the Raman spectroscopy shifts from 1332.99cm-1 at the center to 1331.17cm-1 at the border, which means the stress mode changed from compressive to tensile. These demonstrated a significant inhomogeneity of stress in diamond films. The differences have been attributed partly to high temperature inhomogeneity arc jet during growth and morphological aspects of the film growth. The relationships between stress and methane concentration, and substrate temperature are discussed in detail.

Abstract: High quality diamond film wafers with different thickness are prepared by high power DC arc plasma jet CVD (DCPJ CVD) method using a CH4/Ar/H2 gas mixture. The effects of methane concentration on the growth of carbon balls in anode nozzle and arc stability are studied with theoretical analysis and experimental investigation. The results indicate that different sizes of carbon balls may rapidly grow in the anode nozzle with methane concentration higher than 2 Vol-%, symmetry and uniformity of the rotating arc are strongly affected with the occurrence of carbon balls, which will result in non-uniform deposition of diamond films over a large substrate area. The methane concentration should be controlled at a low level to keep diamond film wafers growth stable. Characterization by X-ray diffraction, Raman spectroscopy and SEM analysis are also carried out.

Abstract: The synthesis of nanocrystalline diamond film on polycrystalline molybdenum substrates was carried out by using of self-made hot filament chemical vapor deposited (HFCVD) system. Positive bias voltage on the grid electrode on top of hot filaments and negative bias voltage on the substrate were applied. High purity and extremely smooth nanocrystalline diamond films were successfully prepared by using the double bias method. Raman, SEM, XRD and AFM results show that the diamond films obtained have grain sizes less than 20nm, nucleation density higher than 1011cm-1. The mechanism of double bias is also discussed in this paper. The positive grid bias increases the active, decomposition and ionization of hydrogen and methane molecules, while negative substrate bias helps positive carbon-containing ions bombard the substrate that leads to the high nucleation density of the diamond film.

Abstract: DC-Plasma arc behavior is one of the key factors on growth of diamond film. The results show that keeping steady DC-Plasma arc can grow better quality diamond film. In a long-time growth of diamond film, there is sediment carbon on about 5mm border-entad anode annulus, which was proved to be graphite. It results in fluctuating and instability of DC-Plasma arc and in the DC-Plasma density, which causes graphite generation and much stress in the film. By means of adjusting anode annulus assembly, pausing the supply of carbon source and increasing H2, the problem of sediment carbon cab be effectively resolved. Finally, the mechanism of the effect of arc behavior on growth of diamond film is discussed.