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Papers by Author: Bo Monemar

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Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epytaxy on SiC/Silicon (100) Substrates

Authors: Marek Godlewski, V.Yu. Ivanov, Peder Bergman, Bo Monemar, A. Barski, R. Langer

1343

Are there any Shallow Acceptors in GaN?

Authors: Bo Monemar

1327

Room Temperature Photoluminescence Linewidth versus Material Quality of GaN

Authors: Bo Monemar, I.A. Buyanova, Peder Bergman, Hiroshi Amano, Isamu Akasaki

1319

Exciton Dynamics in Homoepitaxial GaN

Authors: Bo Monemar, Peder Bergman, Ivan G. Ivanov, Jacek M. Baranowski, K. Pakula, I. Grzegory, Katsushige Tsuno

1275

Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies

Authors: Nguyen Tien Son, Alexsandre Ellison, Mike F. MacMillan, Olof Kordina, W.M. Chen, Bo Monemar, Erik Janzén

603

Optically Detected Magnetic Resonance Studies of Non-Radiative Recombination Centres in 6H SiC

Authors: Nguyen Tien Son, Matthias Wagner, E. Sörman, W.M. Chen, Bo Monemar, Erik Janzén

599

The Neutral Silicon Vacancy in 6H and 4H SiC

Authors: E. Sörman, W.M. Chen, Nguyen Tien Son, Christer Hallin, J. Lennart Lindström, Bo Monemar, Erik Janzén

473

On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN

Authors: Marek Godlewski, V.Yu. Ivanov, A. Kamińska, H.Y. Zuo, E.M. Goldys, T.L. Tansley, A. Barski, U. Rossner, J.L. Rouvicre, M. Arlery, I. Grzegory, T. Suski, Sylwester Porowski, Peder Bergman, Bo Monemar

1149

Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers

Authors: K. Korona, Peder Bergman, Bo Monemar, Jacek M. Baranowski, K. Pakula, I. Grzegory, Sylwester Porowski

1125

Auger-Type Nonradiative Recombination Processes in Bulk and in Quantum Well Structures of II-VI Semiconductors Containing Transition Metal Ions

Authors: Marek Godlewski, M. Surma, A.J. Zakrzewski, T. Wojtowicz, G. Karczewski, Jacek Kossut, Peder Bergman, Bo Monemar

1677