HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Bruce W. Wessels

• Capture and Recombination Processes in Epitaxial Fe-Doped InP
  Published in: Defects in Semiconductors 15 (p881)
• Efficiency of Rare Earth Intra-4f-Shell Luminescence in InP
  Published in: Defects in Semiconductors 17 (p725)
• Endor Study of Radiation Induced Defects in Semi-Insulating GaP
  Published in: Defects in Semiconductors 14 (p1063)
• Investigation of Er-Related Centers in Doped GaP
  Published in: Defects in Semiconductors 18 (p663)
• Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy
  Published in: Defects in Semiconductors 18 (p49)
• Photoluminescent Properties of Yb Doped InAsP Alloys
  Published in: Defects in Semiconductors 16 (p689)
• Radiative Defects in Electron Irradiated InP
  Published in: Defects in Semiconductors 14 (p1027)
• The Importance of Auger Effect on the Efficiency of Er-Related Luminescence in InP:Er
  Published in: Defects in Semiconductors 18 (p657)
• Time Decay Study of the Er³⁺-Related Luminescence in In_1-xGa_xP
  Published in: Defects in Semiconductors 17 (p743)