Papers by Author: C.C. Yang

Abstract: The size-dependent valence-conduction bandgap of semiconductor nanocrystals are predicted based on a model for size-dependent cohesive energy, without any adjustable parameter. The model predicts an increase of the bandgap of semiconductors with decreasing crystalline sizes. It is found that the model predictions are in good agreement with the available experimental results for Si, ZnS, ZnSe, CdS, and CdSe nanocrystals.

Abstract: The pressure-dependent melting temperature of bulk Si, bulk Ge and nanocrystalline (nc) Si are predicted by the Clapeyron equation where the pressure-dependent volume difference is modeled by introducing the effect of surface stress induced pressure. The predictions are found to be consistent with the present experimental and other theoretical results.