Papers by Author: C.C. Yeh

Abstract: The present study aims at polysilicon material fill-in at re-entrant profile at flash memory product. The void was observed after polysilicon fill-in. In order to prevent the void formation, the multi-step process of deposition wet-etching deposition (DWD) method was evaluated. The DWD method is found to play beneficial roles in achieving void-free in the floating gate. The high concentration of NH₄OH in APM was choosing for wet etching solution. Scanned electron microscopy (SEM) and transmission electron microscopy (TEM) were employed to measure the polysilicon thickness and cross-section profile of device.