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Papers by Author: Choon Kun Ryu

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Effect of Wet Treatment on Stability of Spin-On Dielectrics for STI Gap-Filling in Nanoscale Memory

Authors: Gyu Hyun Kim, Soon Young Park, Seung Seok Pyo, Ji Hye Han, Jung Nam Kim, Kee Joon Oh, Choon Kun Ryu, Yong Soo Choi, Noh Jung Kwak, Sung Ki Park

Abstract: As a design rule of memory devices is scaled down to sub-100 nm, shallow trench isolation (STI) technology is faced with gap-filling problem in case of CVD oxide and O3-TEOS oxide processes. To overcome the gap-filling problem, a perhydropolysilazane (PHPS) based spin-on dielectric (SOD) has been implemented for nanoscale devices because of self-planarization and excellent gap-filling property [1]. However, the stability of the SOD has been concerned about because it has relatively softer and more porous than conventional HDP oxide. In this paper, we report the effect of wet oxidant treatment on the stability of the SOD for STI gap-filling.

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Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O₃/TEOS CVD

Authors: Seung Cheol Lee, Choon Kun Ryu, Sang Wook Park, Gyu An Jin, Sang Deok Kim, Ki Hong Yang, Sang Hyon Kwak, Su Hyun Lim, Young Jun Kim, Sun Mi Park, Chul Sik Jang, Sung Ki Park

Abstract: The SC-1 treatment prior to the O3/TEOS CVD was a very effective method for gapfilling the nanoscale trench of the high aspect ratio by improving the adsorption of TEOS precursors onto the wall oxide. It was found that the interval duration after the SC-1 cleaning was a critical parameter for the contact angle and the gapfill performance of the O3/TEOS CVD.