Papers by Author: Chuan Bin Wang

Abstract: BaTi2O5 film was prepared on MgO (100) substrate by laser ablation, and the structure and electric property of the film were investigated. The film was b-axis oriented and epitaxially grown on the substrate along two in-plane directions with the a-axes ([100]-orientation) perpendicular to each other. The b-axis oriented BaTi2O5 film exhibited a sharp permittivity maximum (~ 2000) and had a high Curie temperature (750 K). The electrical conductivity increased with temperature and showed the Arrhenius relationship having an activation energy of 1.25 eV.

Abstract: A new lead-free ferroelectric BaTi2O5 film was first prepared by laser ablation. BaTi2O5 films in a single phase were obtained at substrate temperatures (Tsub) from 900 to 1050 K and oxygen partial pressures (PO2) from vacuum (10-6 Pa) to 30 Pa. The films exhibited a (710) and/or (020) preferred orientation, depending on Tsub and PO2. At PO2 = 12.5 Pa and Tsub = 950 - 1000 K, the BaTi2O5 film was b-axis oriented and epitaxially grown on MgO (100) substrate with a rectangularly crossed texture. The epitaxial growth relationship between the film and the substrate were BaTi2O5 (020) [100] // MgO (100) [001] and BaTi2O5 (020) [100] // MgO (100) [010].