Papers by Author: Chun Yang

Abstract: The thermal blockage and thermal round flow in HFCVD system for CVD diamond growth will lead to un-stability of product quality. Finite element method has been used to simulate the gas flow field around the cutting tool substrate within a HFCVD diamond reactor. Experiments have been done to prove the simulation results. Excellent agreement between simulation and experiment was obtained by depositing of CVD diamond coated cutting tool. The thermal blockage and thermal round flow in HFCVD system decrease by using a hollow substrate holder. High quality CVD diamond coating can be obtained using a hollow substrate holder.

Abstract: Chemical vapor deposition (CVD) diamond coatings were deposited on milling cutter substrate using a hollow substrate holder. The substrate is WC–Co cemented carbide contained 6% of cobalt concentration. Structures and stress state of diamond films were analyzed by scanning electron microscopy (SEM) and Raman spectroscopy. It was found that the diamond coating is of the same quality at the same cutting tool deposited on a hollow substrate holder. Diamond (sp3) bonds are better developed with substrate temperature of ~760°C. A higher or lower substrate temperature could lead to a higher non-diamond carbon content in the films. A higher substrate temperature could lead to a higher thermal stress. The compressive stress increases when the substrate temperature is higher or lower than 760°C. The concentration of amorphous phase in the coatings is low with CH4 concentration of 1.0% and 1.5%. A higher non-diamond carbon content and defects in the diamond coatings increase with the increase of CH4 concentration, which leads to the compressive stress value does not increase significantly under a high CH4 concentration.