Papers by Author: Dai Nishijima

Abstract: Aluminum nitride (AlN) thin films formed on the heat-resistant alloy substrates were heated to 1100K. Cracking was observed in the AlN film formed on the stainless steel substrate (SUS430), while no crack was seen in that on the nickel-base superalloy substrate (IN750X). The electrical impedance measurements, X-ray diffraction analysis and finite element method calculation have been conducted to discuss the relationship between the cracking and the stress introduced into the AlN films. The AlN film cracking would be significantly affected by grain refinement of AlN.