Papers by Author: Dong Sheng Li

Abstract: Iron silicide films with two different structures were fabricated by electron beam evaporation (EBE) technique. X-ray diffraction (XRD), Fourier transform infrared (FTIR) and scanning electron microscope (SEM) were carried out to describe the characteristics and structures of the films. It was found that after annealing at 800oC for 5 h, the β-FeSi2 film formed in the sample with the structure of Si/Fe film on silicon substrate, while only FeSi film generated in the sample with the structure of Si/Fe/Si films on silicon substrate. It is considered that the different iron silicides may be due to the different reaction of iron with crystal silicon or amorphous silicon, which is related to diffusion of iron or silicon atoms.

Abstract: The ZnO/n+-Si heterojunction has been fabricated via depositing nominally undoped ZnO film by reactive sputtering on a heavily arsenic-doped (n+) silicon substrate. The sputtered ZnO film was n-type in conductivity with an electron concentration of 1.0×1018 cm-3. The current-voltage characteristics indicate that the ZnO/n+-Si heterojunction does not possess rectifying function. Under the forward bias with the negative voltage applied on the n+-Si substrate, the heterojunction emits ultraviolet and broad visible lights characteristics of near-band-edge and defect-related emissions of ZnO, respectively. The EL mechanism has been tentatively explained in terms of the energy-band diagram.