Papers by Author: Doo Jin Choi

Abstract: Ceramic membranes having less than 1nm size pores have great potential for gas separation at high temperature due to their good thermal stability. Moreover, nanoporous silicon carbide membrane has potential application under hydrothermal condition at high temperature since it is highly stable at high temperature. In this research, nanoporous SiC membrane has been developed on porous alumina support using preceramic polymer. Pore size of the SiC membrane was controlled using polystylene(PS) as the pore forming agent. The SiC membrane having controlled pore size was characterized with SEM, EDS, FT-IR, XRD and pore size measurement. The hydrogen permeability and selectivity toward nitrogen gas of the developed membrane were 0.3 x 10-6 mole/m2.s.pa and 4.1, respectively. The nanoporous hydrogen selective SiC membrane shows promising application in membrane reactor for steam reforming reacti on of natural gas, water gas shift reactions and hydrogen separation from coal gasification such as Integrated Gasification Combined Cycle (IGCC).

Abstract: Ge2Sb2Te5 (GST) has been widely studied for PRAM as reversible phase change material. GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one of important issues for PRAM technology. In order to investigate the effect of nitrogen doping on electrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped (N-doped) and un-doped GST, which were different bottom electrode contact size (0.80~1.00
). N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contact and lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns). The resistance switching ratio (RRESET to RSET) was about 100. The results of this study indicate that nitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power for PRAM operation.

Abstract: In this study, SiC whiskers were grown in porous alumina substrate in order to enhance the filtering efficiency, performance, and durability by controlling pore morphology. This experiment was performed by chemical vapor infiltration (CVI) in order to obtain the whiskers on the inside of pores as well as on the surface of porous the Al2O3 substrate. The deposition morphology was changed remarkably with the deposition position and temperature. First, the mean diameter of whisker was decreased as the position of observation moved into the inside of substrate due to ‘the depletion effect’ and ‘the pressure effect’. Second, the deposition temperature caused the changes of the deposition type such as debris, whiskers and films and these changes of morphology affect the various properties. When SiC films were deposited, the gas permeability and the specific surface area decreased. However, the whisker showed the opposite result; a large specific surface area provides the absorption site and the whiskers in gas traveling path hinder the particles from easily flowing. Comparing with the normal pores (inter-grain open pores), the pores formed by the whiskers have relatively large volume fraction under the same pore size. Porous ceramic filters with whisker will be expected to increase the filtering efficient and gas permeability simultaneously. It is the main advantage of our whiskered filter. Therefore the porous alumina body which deposited the SiC whisker will be the promising material in order to apply to the particulate filter.