Papers by Author: E.A. Gan'shina

Abstract: The research of magneto-optical properties has been conducted for the “Nanocomposite-bismuth telluride” (Co₄₀Fe₄₀B₂₀)_33.9(SiO₂)_66.1/[Te₃Bi₂] multilayer system at various thicknesses of each layer type. We report an enormous enhancement of magneto-optical (MO) response in this system. Besides, a good correlation between thickness dependences of transversal Kerr effect (TKE) and magneto-transport properties has been established. Such correlation was related to peculiarities of the interface forming process at the ferromagnetic (FM) granule boundaries. Moreover, this amplification of magneto-optical response is largest among the other spacer layers, such as Si, Cu, and C, therefore a comparison between them has been plotted.

Abstract: Spectral and field dependencies of Transversal Kerr Effect (TKE) for [(Co45Fe45Zr10)Z(Al2O3)100-Z(X)/α-Si:H(Y)] n multilayers have been studied in the energy range 0.5 - 4.0 eV. It was found that TKE field dependencies in the nearest IR energy range exhibit anomalous behavior for structures only with thin Si layers and this behavior vanishes with increasing of the Si layer thickness. TKE spectra measured in small and large magnetic fields were essentially different. It was shown that magneto-optical response of multilayered structure composite-silicon is the sum of contributions from two composites: (Co45Fe45Zr10) - Al2O3 + Si + silicides and (Co45Fe45Zr10) - Si + silicides, which have a different sign of TKE in the nearest IR spectrum and their magnetic states depend both on composite and semiconducting layer thicknesses.

Abstract: We report magneto-optical spectra of the Heusler bulk alloys Ni-Mn-In, thin films Ni-Mn-Ga, microwires Ni-Mn-In and Ni-Mn-Ga in martensitic and austenitic states. Transversal Kerr effect (TKE) was studied at an angle of light incidence of 68° with respect to the sample plane, in the energy range 0.5 eV < E < 4.0 eV, at 50 350 K temperatures, and in magnetic fields up to 3.5 kOe. The TKE spectra profile does not change too much at martensitic transformation in Ni₂MnGa thin films, only magnitudes of characteristic maxima decrease. The magneto-optical response of Ni₂MnGa microwires is very similar to that for Ni₂MnGa thin films. For most of studied bulk samples, the TKE signal is very weak (about 10^-5), about two orders of magnitude smaller than for thin films, and in many cases could not be detected at all. It indicates the strong dependence of the magneto-optical response of Heusler alloys on the quality of optically or electrochemically polished surfaces and their microstructure.

Abstract: Optical and magneto-optical properties of GaMnSb layers fabricated on GaAs (001) substrates by laser ablation technique were studied using spectral ellipsometry (E =1.24-3.25 eV) and the transversal Kerr effect (TKE) (E = 0.5 4.2 eV) as well as atomic and magnetic force microscopy. Spectra of the constituents of the diagonal components of the permittivity tensor as well as TKE depended substantially on the layer fabrication conditions. At room temperature a strong resonant band was observed in the TKE spectra for the GaMnSb layers with low Mn content in the energy range E 0.5-1.5 eV. This resonant TKE band was explained by excitation of surface plasmons in MnSb nanoclusters, which arose during the growth of the layers. In the energy region E >1.5 eV the TKE spectra were related to interband transitions in MnSb inclusions.

Abstract: Magnetic and magneto-optical properties of multilayers based on the (Co45Fe45Zr10)Z(Al2O3)100-Z composite and amorphous hydrogenated silicon with various thicknesses both of magnetic and semiconductor layers have been investigated. The nonlinear dependence of magnetic and MO characteristics of the nanostructures on the thickness of layers was found. The interface formed on the boundary of two phases (the ferromagnetic granules and the semiconductor ones) strongly influences the magnetic and MO properties of the structures with thin Si layers.

Abstract: Optical and magneto-optical properties of In(Ga)MnAs layers fabricated by laser ablation on GaAs(100) substrates were studied. Spectra of the optical constants and the transversal Kerr effect (TKE) depended substantially on the conditions of layer fabrication and testified to the presence of MnAs inclusions in all the samples. The cross-sectional transmission electron microscopy revealed the presence in the layers of inclusions 10-40 nm in size. At room temperature, a strong resonant band was observed in the TKE spectra of some In(Ga)MnAs layers in the energy range 0.5-2.7 eV. The resonant character of the TKE spectra was explained by excitation of surface plasmons in the MnAs nanoclusters embedded in the semiconductor host.