Papers by Author: E. Guziewicz

Abstract: ZnO as well as SiC are wide bangap materials with prospective electronic applications. Very good lattice matching of the materials allowed formation a n-ZnO/p-SiC heteroepitaxial junction. The n˗ZnO film was epitaxially grown onto the p-SiC substrate using the atomic layer deposition method. The fabricated p-n diode was studied by I-V and C-V characteristics as well as by impedance spectroscopy. The diode shows a high rectifying ratio of 10⁷ and an ideality factor of 1.21.