Papers by Author: Eckhard Pippel

Abstract: Dislocations are one-dimensional crystal defects. Their dimension characterize the defects as nanostructures (nanowires). Measurements on defined dislocation arrays proved numerous exceptional electronic properties. A model of dislocations as quantum wires is proposed. The formation of the quantum wire is a consequence of the high strain level on the dislocation core modi-fying locally the band structure.

Abstract: Kinetics of oxide layer dissolution and atomic structure of Si-Si interface in Si wafer bonded structures have been investigated by transmission electron microscopy. Samples of Si(001)/SiO2/Si(001) and Si(110)/SiO2/Si(001) structures were fabricated by direct hydrophilic wafer bonding of 200 mm wafers followed by high temperature annealing. It is found that the decomposition rate of oxide layer and formation of Si-Si bonded interface depends very much on lattice mismatch and twist angle.