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Papers by Author: F. Le Bihan

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Control of the Weak Phosphorus Doping in Polysilicon

Authors: M. Zaghdoudi, M.M. Abdelkrim, M. Fathallah, T. Mohammed-Brahim, F. Le Bihan

Abstract: The optical and electrical properties of undoped and low doped polycrystalline silicon films deposited by LPCVD technique are analysed. Photothermal deflexion spectroscopy, and electrical conductivity in the temperature range 50- 475 K are used. The effect of low phosphorus doping on the density of defects, electrical parameters and hopping conduction are examined and interpreted in conjunction with the passivation of defects by the introduction of phosphorus atoms. The density of states at the Fermi level is also calculated.

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Sensitivity Improvement of Polysilicon Thin-Film Transistor-Based Magnetic Sensors

Authors: E. Carvou, F. Le Bihan, R. Rogel, O. Bonnaud

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Silicon Films Deposited by Low-Pressure Chemical Vapour Deposition for Microsystems

Authors: H. Mahfoz-Kotb, A.C. Salaün, T. Mohammed-Brahim, F. Bendriaa, F. Le Bihan, O. Bonnaud

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Electrical Properties of High Value Doped Polysilicon-Based Resistors

Authors: E. Carvou, F. Le Bihan, A.C. Salaün, R. Rogel, O. Bonnaud, Y. Rey-Tauriac, X. Gagnard, L. Roland

435

Polysilicon Thin-Film Transistors Based on Frequency Doubled cw-Nd: YVO₄ Laser Crystallized Silicon

Authors: A. Saboundji, J.F. Michaud, T. Mohammed-Brahim, F. Le Bihan, G. Andrä, J. Bergmann, Fritz Falk

Polycrystalline Silicon as a Material for Magnetic Sensors: Application to Hall and TFT-Hall Cells

Authors: F. Le Bihan, E. Carvou, R. Rogel, A.C. Salaün, B. Fortin, O. Bonnaud

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Experimental Determination of Hall Factor for Hydrogenated In-Situ Phosphorus Doped Polysilicon Films

Authors: F. Le Bihan, B. Fortin, H. Lhermite, O. Bonnaud, D. Briand

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