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Articles by author: G. Borghs

• Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al_.3Ga_.7As by Mössbauer Spectroscopy
  Published in: Defects in Semiconductors 17 (p1105)
• DX Center Breakdown in High Electric Fields
  Published in: Ultrafast Phenomena in Semiconductors (p25)
• Ferromagnetic Clusters in In_1-xMn_xAs
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p623)
• High-Speed Switching of Double-Barrier Resonant-Tunneling Light-Emitting Diodes Investigated by Picosecond Electroluminescence Measurements
  Published in: Ultrafast Phenomena in Semiconductors (p29)
• Mössbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and Al_xGa_1-xAs
  Published in: Defects in Semiconductors 15 (p1245)
• Suppression of Auger Recombination by Strain in Sb Based mid-IR Lasers
  Published in: Semiconductor Materials and Technology (p20)