HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: G. Brunthaler

• Characterization of Deep Levels by Microwave Absorption Spectroscopy
  Published in: Defects in Semiconductors 14 (p521)
• Constant Photo-EPR: A New Method for Deep Level Characterization
  Published in: Defects in Semiconductors 14 (p515)
• Correlated Charged Donors in GaAs/AlGaAs Quantum Well. Quantum- and Mobility-Scattering Times
  Published in: Defects in Semiconductors 18 (p443)
• Doping Limits in Wide Gap II-VI Compounds
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p29)
• Fabrication and X-Ray Diffractometry Investigation of CdTe/MnTe Multiple Quantum Wires
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p423)
• Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells
  Published in: Defects in Semiconductors 17 (p641)
• Influence of Spatial Coulomb Potential Fluctuations on the Mobility in Al_xGa_1-xAs with DX Centers
  Published in: Defects in Semiconductors 17 (p1439)
• MBE Growth of Heterostructures and Superlattices Containing MgTe
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p407)
• Negative-U Aspects of DX-Center in Al_x-Ga_1-xAs
  Published in: Physics of DX Centers in GaAs Alloys (p233)
• On the Electron Capture Kinetics of DX Centers in Al_xGa_1-xAs:Si
  Published in: Defects in Semiconductors 17 (p1149)
• On the Kinetics of Photoconductivity in Al_xGa_1-xAs:Si
  Published in: Defects in Semiconductors 16 (p823)
• Persistent Photoluminescence of DX-Centers in Ga_1-xAl_xAs:Si
  Published in: Defects in Semiconductors 15 (p1131)
• Photoionization of Deep Traps in AlGaAs/GaAs Quantum Wells
  Published in: Defects in Semiconductors 15 (p695)
• Photoluminescence of CdZnTe and CdZnSe Quantum Well Wires Fabricated by Reactiv Ion Etching
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p179)
• Zn_1-xCd_xSe Quantum Wells in ZnMgSe
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p195)