Papers by Author: Gábor Pető

Abstract: The nanoindentation behaviours of single crystalline silicon samples has gained wide attention in recent years, because of the anomaly effects in the loading curve, caused by the pressure induced phase transformation of silicon. To further enlighten the phenomenon bulk, ion-implanted, single crystalline Si samples have been studied by nanoindentation and by atomic force microscopy. The implantation of Si wafers was carried out by P+ ions at 40 KeV accelerating voltage and 80 ions/cm2 dose, influencing the defect density and structure of the Si material in shallow depth at the surface. Our experiments provide Young’s modulus and hardness data measured with Berkovich-, spherical- and cube corner indenters, statistics of the pop-in and pop-out effects in the loading- and unloading process, and interesting results about the piling-up behaviour of the Si material.

Abstract: Polycrystalline diamond and diamond-like carbon (DLC) films were deposited by microwave chemical vapor deposition (MW-CVD) and by pulsed laser deposition (PLD) respectively. Ar ion bombardment was used to change the properties of these layers. The sp2 bonds were determined directly by reflected electron energy loss spectroscopy (REELS) and further characterization was made by Raman scattering. The polycrystalline diamond showed only very slight π-π* transition at 6.5 eV, but after Ar ion bombardment strong peak was formed but definitely shifted to lower energy compared to the well known π-π* transition of graphite. The as deposited PLD carbon films showed broad peak around 5eV clearly different than the π-π* transition (6.5eV). After Ar+ ion bombardment the peak was shifted also to lower energy range (4-5eV) with a remaining part at 6.5eV. The lower energy part of the peak can be correlated to the transition of sp3 sites, while this change in peak position was not detectable after ion bombardment of the reference HOPG sample, which does not contain sp3 hybridized carbon atoms.

Abstract: Diamond layers have a potential application as the highest band-gap semiconductor for electronic devices. One of the major problems is to form electric contact on the diamond surface useful for an electronic device. This paper shows the properties of the contacts formed by the very promising ion implantation technique. The diamond layers were deposited with Microwave Assisted Chemical Vapor Deposition (MW-CVD) equipped with special extra features like High Voltage Bias and Heated Substrate Holder [1]. Phosphoruos ion implantation and gold deposition were used for the contact formation. This technique resulted graphitization the top of the diamond film and intermixing of gold with the graphite or diamond surface. The properties of the contacts were tested with surface conduction characterization methods, and the properties of the contact to diamond interface was investigated with SIMS (Secondary Ion Mass Spectroscopy ) and XPS (X-ray Photoelectron Spectroscopy).

Abstract: CVD diamond layers are often used as protective layers. One of the most important of these applications requires pinhole-free layers to protect against fluid materials, such as found in chemically aggressive environment. These pinholes are present even in very good quality CVD diamond films. In this work we combined the Pulsed Laser Deposition (PLD) technique with Microwave assisted Chemical Vapor Deposition (MW-CVD). We used CVD diamond films prepared under different conditions and layer thicknesses. Both of these proceses produced inperfect protective layers, but we proved that a PLD DLC film over the diamond layer does reduce the number of pinholes in the coating. We used special chemical alcaline etching to detect the remaining pinholes, and to test the corrosion protective properties of the layers. As a result we were able to prepare samples of 1 x 1cm2 with only 0.2 micron thickness without any pinholes, while in CVD diamond layers a thickness of 2,5 micron was needed for the same level of compactness.