Papers by Author: Györgyi Glodán

Abstract: Interdiffusion in Zn/InSb system has been investigated under high (0.59×10⁶ G) and low (1 G) gravity conditions at 673, 593 and 573K, respectively. Samples annealed at 0.59×10⁶ G, 673K for 60 hours, indicated the formation of a periodic reaction layer structure. Since such structures can be formed in solid state reactions of ternary systems [, the effect of high gravitational field and high hydrostatic pressure (approximately 3kbar) in the formation of periodic patterns was investigated. Systematic investigations at ambient pressure and low gravitational field were carried out at 593 and 573 K in sandwich geometry. SEM and EDX analysis had shown that there are different phases between the initial components. Starting from the Zn side of the specimen there is a very thin single-phase with high (about 90%) In content. Next to it is a thin two-phase layer, containing mainly 50-50% InSb and some elongated Zn particles and then there is a thick phase with the composition of Zn₅In₂Sb₄ which is followed by a similar two-phase mixture (InSb+Zn) similar to the Zn side of the sample. Although the diffusion zone is not a well developed periodic structure, but every layer (clearly distinguishable form the others and was either a single-or multiphase layer) grows with the time.

Abstract: Solid state reactions between amorphous Si and crystalline Co have been investigated by 4W electrical resistance and TEM. Multilayered (with 10 periods of 5nm a-Si/5nm Co and 10 nma- Si/10nm Co layers) as well as tri-layered samples (20nm a-Si/3nmCoSi/6nm Co) were produced by magnetron sputtering and isothermally heat treated at different temperatures between 473 and 523K. From the time evolution of the normalized resistance the kinetics of the process were determined by fitting a power law, tk, and k was between 0.8 and 1. Possibility of the interface reaction control and/or the effect of the diffusion asymmetry (which was recently published for the non-parabolic interface shifts on the nanoscale) will be discussed.