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Articles by author: H.S. Leipner

• Deformation Induced Defects in GaAs - The Role of Dislocations
  Published in: Positron Annihilation - ICPA-11 (p497)
• Dislocation Motion in Compound Semiconductors
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p343)
• Dislocation Structures after Microdeformation of CaAs Single Crystals
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p349)
• Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs
  Published in: Positron Annihilation - ICPA-12 (p111)
• Generation of Point Defects during Plastic Deformation of InP
  Published in: Defects in Semiconductors 18 (p1267)
• Interaction of Copper and Sulfur with Dislocations in GaAs
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p331)
• Investigations of Extended Defects after Sulfur Diffusion in GaAs
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p443)
• Irradiation Experiment Revisited – Stability and Positron Lifetime of Large Vacancy Clusters in Silicon
  Published in: Positron Annihilation - ICPA-12 (p135)
• Open-Volume Defects in Plastically Deformed Semiconductors
  Published in: Positron Annihilation - ICPA-12 (p61)
• Relation between Dislocation Motion and Formation of Intrinsic Point Defects
  Published in: Defects in Semiconductors 17 (p1589)
• Sintering of Copper, Nickel and Tungsten Studied by Positron Lifetime Spectroscopy
  Published in: Positron Annihilation - ICPA-10 (p541)
• Sol-Gel Route for Electrophoretic Deposition of Mullite Diffusion Barriers on C/C-SiC Composites
  Published in: Progress in Advanced Materials and Processes (p343)
• Study of Deformed Si and Ge by Positron Lifetime Measurements
  Published in: Positron Annihilation - ICPA-9 (p1101)
• Study of Plastically Deformed Semiconductors by Means of Positron Annihilation
  Published in: Defects in Semiconductors 19 (p981)
• The Magnesium Related Luminescence in Silicon and its Quenching due to the Presence of Dislocations
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p313)