Papers by Author: Hiroaki Tanaka

Abstract: A commercial silicon nitride powder with oxide sintering additives was ground with high-energy ball mill to obtain nano-sized powder. Metallic aluminium powder was added as a grinding additive. Effect of high-energy ball milling was evaluated by X-ray diffraction analysis. After milling, height of background increased and peak height of silicon nitride decreased in XRD chart, which suggested that vitrification and/or decrease in grain size of silicon nitride occurred. The milled powders were sintered by spark plasma sintering system. Aluminium nitride was formed during sintering by reaction of aluminium and atmospheric nitrogen. Dense nano-ceramics, which were composed of silicon nitride and sialon, were obtained by sintering at 1550 oC.

Abstract: In our previous paper [1], we simulated an accumulation-mode MOSFET with an epitaxial layer channel (epi-channel) that had a high channel mobility. In this paper, we experimentally show that channel mobility is enhanced by the epi-channel. On varying the thickness of the epi-channel, the channel mobility improved from a few cm2/Vs to 100 cm2/Vs. Finally, we show that the “Normally-off” accumulation MOSFET with a 720 V breakdown voltage has a low on-resistance (10.4 m1cm2) and that the 3 × 3 mm2 accumulation MOSFET operates over 10 A and its on-resistance is 19 m1cm2.