Papers by Author: Il Ho Kim

Abstract: Poly(ether ketone)s (PEK) containing 25-75 mol % valeric acid were prepared with bisphenol A, 4,4-dichlorobenzophenone and 4,4-Bis(4-hydroxylphenyl)valeric acid using potassium carbonate in DMAc (dimethyl acetami de) at 165 °C. Copolymers containing carboxylacid group were reduced to hydroxy group by BH3 solution 1M in THF and NaBH4 co-catalyst. Sulfonated poly(ether ketone)s (S-PEK) were obtained by reaction of 1,3-propanesultone and the reduced copolymer (PEK-OH) with sodium methoxide. A series of copolymers were studied by 1H-NMR spectroscopy, differential scanning calorimeter (DSC), and thermo gravimetric analysis (TGA). Sorption experiments were conducted to observe the interaction of sulfonated polymers with water and methanol. The S-PEK membranes exhibited proton conductivities from 1.31  10-3 to 3.52  10-3 S/cm, water swell from 12.70 to 35.50 %, IEC from 0.45 to 0.75 meq/g and methanol diffusion coefficients from 3.65  10-7 to 5.10  10-7 cm2/S at 25 °C.

Abstract: Recent search for novel thermoelectric materials has revealed a new class of compounds with half-Heusler structure as good candidates for higher performance thermoelectric conversion [1-2], since the structure was first found [3]. The unit cell of the half-Heusler with a space group F4¯ 3m consists of 4 interpenetrating cubic lattices. The crystallographic sites (0,0,0) and (1/4, 1/4, 1/4) are occupied by two different transition metals, the (1/2, 1/2, 1/2) site is occupied by Sn, Sb, or Bi, and the site (3/4, 3/4, 3/4) is empty [4,5]. Candidates with this structure for the investigation would be categorized into the combination of (Ti/Zr/Hf)(Co/Ni/Pt)(Sb/Sn/Bi) [4-6].

Abstract: Sn-doped CoSb3 skutterudites were prepared by encapsulated induction melting and their electronic transport properties were examined. The Sn dopant generated excess charge carriers, which increased in concentration with increasing Sn doping content. However, the carrier mobility decreased with increasing doping content, indicating a decrease in the hole mean free path by impurity scattering. The Seebeck coefficient decreased and the electrical resistivity decreased slightly with increasing the carrier concentration due to the reduced carrier mobility by impurity scattering. The lattice thermal conductivity was dominant in the Sn-doped CoSb3 skutterudites.

Abstract: In-filled CoSb3 skutterudites (InzCo4Sb12) were prepared and the filling effects on the thermoelectric and transport properties were examined. Seebeck coefficient and Hall coefficient confirmed that all the samples showed n-type conductivity. Temperature dependence of the electrical resistivity suggested that InzCo4Sb12 is a highly degenerate semiconducting material. The thermal conductivity was considerably reduced by In filling and the lattice contribution was dominant.

Abstract: Te-doped CoSb3 was prepared by the encapsulated induction melting, and its doping effects on the thermoelectric properties were investigated. Single phase d-CoSb3 was successfully obtained by the subsequent annealing at 773K for 24 hours. Tellurium atoms acted as electron donors by substituting antimony atoms. Thermoelectric properties were remarkably improved by the appropriate doping. Dimensionless figure of merit was obtained to be 0.83 at 700K for the CoSb2.8Te0.2 specimen.

Abstract: Thermal, electrical and mechanical properties of high purity niobium and tantalum refractory rare metals were investigated to evaluate the physical purity. Higher purity niobium and tantalum metals showed lower hardness due to smaller solution hardening effect. Temperature dependence of electrical resistivity showed a typical metallic behavior. Remarkable decrease in electrical resistivity was observed for a high purity specimen at low temperature. However, thermal conductivity increased for a high purity specimen, and abrupt increase in thermal conductivity was observed at very low temperature, indicating typical temperature dependence of thermal conductivity for high purity metals. It can be known that reduction of electron-phonon scattering leads to increase in thermal conductivity of high purity niobium and tantalum metals at low temperature.

Abstract: The encapsulated induction melting was attempted to prepare the Sn-filled CoSb3 skutterudites and their electronic transport properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent isothermal heat treatment at 823K for 6 days in vacuum. The Sn-filled CoSb3 showed p-type conductivity at 300K to 700K at it is a highly degenerate semiconductor. Lattice contribution was dominant to thermal conductivity and it was considerably reduced by Sn filling in the CoSb3 skutterudite.

Abstract: Non-stoichiometric Zn4-xSb3 compounds with x=0~0.5 were prepared by vacuum melting at 1173K and annealing solidified ingots at 623K. Electrical resistivity and Seebeck coefficient at 450K increased from 1.8
cm and 145K-1 for Zn4Sb3(x=0) to 56.2
cm 350K-1 for Zn3.5Sb3(x=0.5) due to the decrease of the carrier concentration. Hall mobility and carrier concentration was 31.5cm2V-1s-1 and 1.32X1020cm-3 for Zn4Sb3 and 70cm2V-1s-1 and 2.80X1018cm-3 for Zn3.5Sb3. Electrical resistivity of Zn4-xSb3 with x=0~0.2 showed linearly increasing temperature dependence, whereas those of Zn4-xSb3 with x=0.3~0.5 above 450 K tended to decrease. Thermal conductivity of Zn4Sb3 was 8.5mWcm-1K-1 at room temperature and that of Zn4-xSb3 with x≥0.3 was around 11mWcm-1K-1. Maximum ZT of Zn4Sb3 was obtained around 1.3 at 600K. Zn4Sb3 with x=0.3~0.5 showed very small value of ZT=0.2~0.3.

Abstract: Co1-xFexSb3 skutterudites were synthesized by encapsulated induction melting and their thermoelectric properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent heat treatment at 773K for 24 hours in vacuum. However, δ-CoSb3 was decomposed to FeSb2 and Sb when x≥0.3, which means that the solubility limit of Fe to Co is x<0.3. The positive signs of Seebeck coefficients for all Fe-doped specimens revealed that Fe atoms acted as p-type dopants by substituting Co atoms. Thermoelectric properties were remarkably enhanced by Fe doping and optimum composition was found to be Co0.7Fe0.3Sb3 in this study.

Abstract: Encapsulated induction melting was attempted to prepare binary skutterudite CoSb3 and its thermoelectric properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent isothermal heat treatment at 773K-873K for 24 hours in vacuum. Thermoelectric properties were changed with constituent phases because β-CoSb and Sb are metallic/semimetallic phases, while γ-CoSb2 and δ-CoSb3 are semiconducting phases. Thermoelectric properties were remarkably improved by the proper heat treatment and they were closely related to phase transitions.