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Articles by author: J. Bollmann

• Capacitance-Transient Detection of X-Ray Absorption Fine Structure: A Possible Tool to Analyze the Structure of Deep-Level Centers?
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p483)
• DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive ¹¹¹In Atoms in Ge
  Published in: Defects in Semiconductors 19 (p53)
• Electrically Active Near-Surface Implantation Defects in Silicon and GaAs
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p461)
• The Photoluminescence of Pt-Implanted Silicon
  Published in: Defects in Semiconductors 19 (p473)