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Papers by Author: J. Jagielski

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Micromechanical Properties of Nanometer-Thick Layers of Implanted Alumina

Authors: J. Jagielski, A. Piatkowska, Zdzislaw Librant, P. Aubert, C. Legrand-Buscema, O. Maciejak, J. Piekoszewski, Z. Werner

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PL Studies of Nanostructured Layers in Temperature - Pressure Treated Silicon Implanted with Helium

Authors: Barbara Surma, Andrzej Misiuk, Vito Raineri, A. Wnuk, J. Jagielski, A. Bukowski

Abstract: The effect of annealing under enhanced hydrostatic pressure (HT-HP treatment) on the structural evolution of nano-structured buried He-enriched layers in silicon was investigated by photoluminescence and TEM methods. It has been stated that the HT-HP treatment can affect the defect structure of nano-structured He-containing layer. Enhanced creation of helium bubbles during the HP-HT treatment takes place at HT £ 600oC. Annealing at HT ³ 800oC results in the accumulation (gettering) of oxygen atoms in the He implanted layer in Czochralski grown silicon. HP treatment stimulates this effect.

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Ion Implanted Nanolayers in AlN for Direct Bonding with Copper

Authors: J. Piekoszewski, Wieslawa Olesińska, J. Jagielski, D. Kaliński, M. Chmielewski, Z. Werner, M. Barlak, Wiesław Szymczyk

Abstract: Experiments to directly bond AlN with Cu were conducted for different pre-treatments of the bonded components. AlN substrates were implanted either with oxygen, or titanium or iron ions at low (15 keV) or high (70 keV) energy, or thermally oxidized. Some Ti-implanted samples were also thermally oxidized. The copper component was annealed and thermally oxidized. The best results, with respect to the bond shear strength, were obtained for low-energy implantation of oxygen and titanium.

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